Aliso Viejo, Calif. − Microsemi Corp. has expanded its silicon carbide (SiC) Schottky product family with a new line of 650 volt (V) diodes, targeting high-power industrial applications including solar inverters. These SiC Schottky diodes are said to enable system efficiency improvements in a small footprint thanks to the benefits of SiC materials, which are being considered by many power electronics and systems designers today.
SiC offers several benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity, said Microsemi. These attributes are said to deliver better performance characteristics including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability, according to the company.
"Microsemi's SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency," said James Kerr, senior product marketing manager for Microsemi's Power Products Group, in a statement. "Silicon carbide is a game-changing technology for many of our customers. With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and a roadmap that includes several new SiC products, Microsemi is positioned to capitalize on this growing market opportunity."
The new 650V SiC Schottky diode product portfolio includes:
- APT10SCD65K (650V, 10A, TO-220 package)
- APT10SCD65KCT (650V, 10A, common cathode TO-220 package)
- APT20SCD65K (650V, 20A, TO-220 package)
- APT30SCD65B (650V, 30A, TO-247 package)
These devices are also used in the company's power modules, for aerospace, welding, battery charging and other high-power industrial applications.
Availability: The 650V SiC Schottky diodes are in production now. For a sample, please contact a local Microsemi distributor or Microsemi sales representative, or email email@example.com and reference "SiC" in the subject line.