Geneva – STMicroelectronics’ touts that its advanced 600-V trench-gate field-stop IGBT V series offers a smooth and “tail-less” turn-off characteristic, saturation voltage as low as 1.8V, and maximum operating junction temperature of 175°C, which deliver increased system energy efficiency, higher switching frequencies, and simplified thermal and electromagnetic interference (EMI) design.
The 600-V IGBTS increase switching efficiency and maximum operating frequency by eliminating the conventional IGBT turn-off current tail and using ultra-thin die thickness to help switching performance and improve thermal dissipation, said ST. It also uses a proprietary optimized trench gate field-stop process that provides improved thermal resistance and maximum junction temperature up to 175°C, as well as tight control over parameters such as saturation voltage. This allows safe paralleling of multiple IGBTs and enables a greater current density and higher on-state efficiency, added ST.
The robust IGBTs also feature high dV/dt capability. A co-packaged ultra-fast soft-recovery diode minimizes turn-on energy losses. Diode-free variants are available for more cost-sensitive applications.
Availability: The V series IGBTs rated from 20A to 80A are in production now in TO-3P, TO-3PF, TO-220, TO-220FP, TO-247 or D2PAK packages.
Pricing: The 40A/600V STGW40V60DF in TO-247 package is priced at $2.80 for orders over 1,000 pieces.