Malvern, Pa. — Vishay Intertechnology, Inc. has expanded its family of TrenchFET p-channel Gen III power MOSFETs, claiming the industry's first -20 V device in the 2.4- x 2.0- x 0.4-mm CSP MICRO FOOT package size. The device is designed to increase efficiency and save space in mobile computing devices. The Vishay Siliconix Si8851EDB offers extremely low on-resistance of 8.0 mΩ and 11.0 mΩ at -4.5 V and -2.5 V gate drives, respectively. The low-on resistance enables designers to achieve lower voltage drops in their circuits for more efficient use of power and longer battery run times, said Vishay.
The Si8851EDB's p-channel Gen III technology, in combination with MICRO FOOT's packageless CSP technology and 30-pin design and layout, provides the lowest on-resistance possible for a given outline area, according to Vishay. Compared with the closest competing 2- x 2- x 0.8-mm device, the Si8851EDB combines a 50 percent thinner profile with almost half the on-resistance at a 4.5-V gate drive, providing 37 percent lower on-resistance per package size. Offering similar on-resistance to 3.3- x 3.3- x 0.8-mm MOSFETs, the Si8851EDB provides a 56 percent smaller outline and at least a 30 percent lower on-resistance per package size.
The low-profile 0.4-mm device is optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks. It offers typical electrostatic discharge (ESD) protection to 6 kV to help protect handheld devices against static charges while ensuring safe part handling during manufacturing. The MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Availability: Samples and production quantities are available now, with lead times of 12 to 16 weeks for larger orders.
Pricing: Starts at $0.15 per piece in quantities of 100,000 for U.S. delivery.