LaFox, Illinois -- Richardson RFPD, Inc. today announces that it is accepting orders for five new discrete GaN transistors from TriQuint.
The new discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) offer a range of pulsed output power covering 10W to 285W, with operating ranges from DC to 6 GHz. The devices are fabricated with TriQuint's TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can lower system costs in terms of fewer amplifier lineups and lower thermal management costs.
Four of the new GaN HEMTs are available in ceramic packages; one is available in a 5 mm x 5 mm QFN package. They are versatile for a range of wideband and narrowband applications, including military and civilian radar and avionics, professional and military radio communications and jammers, and test instrumentation.
Evaluation boards of the new products are available upon request.
These new discrete GaN transistors are part of Richardson RFPD's launch of the next generation of the TriQuint GaN Tech Hub, a micro-website featuring the latest news on GaN innovations and product releases from TriQuint. Recent additions to the Tech Hub include a video featuring TriQuint's new GaN process and the kickoff of the #TriQuintGaN hashtag campaign.
The devices are available for order and delivery. Richardson RFPD's design advisors provide extensive technical expertise and design-in assistance for TriQuint products, including these new discrete HEMTs. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the TriQuint Tech Hub. They are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from TriQuint, please visit the TriQuint storefront webpage.