Albany, N.Y. – The global insulated gate bipolar transistor (IGBT) and super junction MOSFET market is expected to grow from $4.8 million in 2012 to $10.1 million by 2019, growing at a compound annual growth rate (CAGR) of 11.6 percent over the forecast period of 2013 to 2019, according to Transparency Market Research.
The report, "IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019," finds that an increasing focus on energy efficiency in electrical and electronic product designs, driven by regulatory pressure, is expected to be a key growth driver in this market. A key finding indicates that Asia Pacific is the fastest growing market for these power semiconductors driven by the electronics manufacturing industry in China, South Korea and Taiwan. In 2012, Asia Pacific was the largest regional market for these devices by revenue and accounted for about 39 percent of the total global market.
IGBTs are supplied as either discrete devices or modules. In 2012, IGBT modules held about a 64 percent revenue share of the total market, according to the report. Growth of IGBT modules is primarily driven by increasing demand for photovoltaic inverters and electric and hybrid electric vehicles (EV/HEV), while discrete IGBT demand is driven by the consumer electronics sector. However, the industrial sector was the leading application of IGBT in 2012 by revenue, followed by the motor drives application segment.
The EV/HEV sector is expected to be the fastest growing segment for IGBTs during the forecast period, growing at a CAGR of 21.1 percent, according to the report. The converter, charger and adapter application was the leading segment for super junction MOSFETs in 2012. However, like IGBTs, the EV/HEV application for super junction MOSFETs is forecast to be the fastest growing application area, growing at a CAGR of 30 percent during the forecast period.
Other applications for IGBTs and super junction MOSFETs include uninterruptable power supplies, wind turbines, PV inverters, rail traction, telecommunications (networking, servers), and lighting.
In 2012, the market leader for IGBT was Mitsubishi Electric Corp., followed by Infineon Technologies AG. For super junction MOSFETs, Infineon Technologies AG was the market leader in 2012 by percentage share. Other key players in the IGBT and super junction MOSFET market include Fairchild Semiconductor, STMicroelectronics, ABB, Hitachi Power Semiconductor Device, Toshiba, Vishay Intertechnology, Fuji Electric, and Semikron.
Several new products have been introduced this year from some of the major players. These include STMicroelectronics’ H series 1200-V IGBTs, Infineon’s RC-H5 reverse conducting IGBT, and Toshiba’s DTMOS IV-H series of super junction MOSFETs.
Leveraging second-generation trench-gate field-stop high-speed technology, the STMicroelectronics advanced 1200-V IGBTs save more energy and last longer for applications such as solar inverters, welders, uninterruptible power supplies, and power-factor correction (PFC) converters. Key features of the H series 1200-V IGBTs include up to 15 percent lower turn-off losses and up to 30 percent lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher efficiency operation at switching frequencies above 20 kHz, according to ST.
The ST 1200-V IGBTs also offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits and minimizing energy losses in circuits with a freewheel diode. These rugged devices offer latch-up-free operation at up to four times the nominal current, and minimum short-circuit time of 5µs (at 150°C starting junction temperature). The extended maximum operating junction temperature of 175°C helps enhance service lifetime and simplify system cooling, said ST. A wide Safe Operating Area (SOA) boosts reliability in applications where high power dissipation is required. The devices are in mass production in 15-A, 25-A, and 40-A versions.
Infineon has expanded its family of reverse conducting IGBTs with a 650-V class device including a monolithically integrated RC diode for resonant applications The RC-H5 family is said to reduce switching losses by 30 percent, enabling greater energy efficiency than earlier generations. This allows designers to work with switching frequencies of up to 40kHz, said Infineon. The new design is said to deliver a 5 percent savings in energy consumption for the entire system. This also means that the high performance devices can be used in a broader range of applications including multi-hob induction stoves and inverterized microwave ovens, as well as for all partial hard-switching half-bridge topologies.
In addition to the energy efficiency, systems operating using the RC-H5 650V also have significantly improved reliability due to the increased blocking voltage, which gives more design margin, said Infineon. The ability of the 650V component to provide soft or hard switching as required provides greater flexibility while putting less strain on the system. The improved EMI is also a significant benefit in fast and soft switching systems because less filtering is required. The devices operate in ambient temperatures of up to 175°C. The RC-H5 component is available in 20A, 40A and 50A. Sample models will be available in June 2014. Production also is expected to start in June.
The new DTMOS IV-H series of 600-V super junction MOSFETs from Toshiba America Electronic Components, Inc. (TAEC) improve power efficiency while helping to reduce product footprint. The series of high-speed switching type super junction MOSFETs consists of the TK31N60X, TK39N60X and TK62N60X, and is based on Toshiba's fourth generation 600V super junction MOSFET DTMOS IV series.
Using Toshiba's single epitaxial process, the DTMOS IV-H series of super junction MOSFETs is suited to applications that require high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecom base stations; and as power conditioners for photovoltaic inverters. One of the key features of the series is the high-speed switching performance in combination with the low ON-resistance level of conventional DTMOS IV without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, which also contributes to improved power efficiency and downsizing of products, said Toshiba. The devices are available now in TO-247 packages. Other package options, including 8- x 8-mm DFN, TO-220 and TO-220SIS, will be available soon.