LaFox, Ill. – Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new silicon carbide power Z-FET® from Cree, Inc. The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET that features N-channel enhancement mode and is available in a TO-247-3 package. Benefits of the C2M0040120D include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability. The new device is ideally suited for solar inverter, switch-mode power supply, high-voltage DC/DC converter, and motor drive applications.
According to Cree, additional key features of the new SiC MOSFET include:
· Continuous drain currant (ID):
--60A (@ 25ºC)
--40A (@ 100ºC)
· High-speed switching with low capacitances
· High blocking voltage with low RDS(on)
· Easy to parallel and simple to drive
· Resistant to latch-up
To find more information, or to purchase this product today online, please visit the C2M0040120D webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Cree, please visit the Cree storefront webpage.