Geneva – STMicroelectronics has introduced its new M-Series of 1200-V IGBTs that feature advanced trench-gate field-stop technology. The new design is said to save more energy and increase reliability in applications such as solar inverters, welding equipment, uninterruptible power supplies, and industrial motor drives.
With highly optimized conduction and turn-off characteristics, as well as low turn-on losses, the IGBTs are well suited for use in hard-switching circuits operating at up to 20 kHz, according to ST. Other features include increased maximum operating temperature of 175°C, a wide safe operating area (SOA) with latch-up free operation, and a short-circuit withstand time of 10 µs at 150°C to ensure rugged performance in harsh ambient and electrical environments.
The third generation advanced design for the trench gate structure and an optimized high-voltage IGBT architecture minimizes voltage overshoot and eliminates oscillation during switch-off, thereby reducing energy losses and simplifying circuit design, while low saturation voltage (Vce(sat)) ensures high conduction efficiency, said ST. In addition, the positive temperature coefficient and tight parameter distribution of Vce(sat) simplify paralleling of devices for increased power-handling capability.
ST also touts outstanding EMI performance thanks to the latest-generation diode technology co-packaged in anti-parallel with the IGBT, which is said to provide a fast recovery time and enhanced softness without significantly increasing turn-on losses.
Availability: The 40A STGW40M120DF3, 25A STGW25M120DF3, and 15A STGW15M120DF3 in standard TO-247 package, and the STGWA40M120DF3, STGWA25M120DF3 and STGWA15M120DF3 in TO-247 long-lead package, are in mass production now.
Pricing: Starts from $2.80 for the STGW15M120DF3, for orders of 1000 units.