Geneva – STMicroelectronics’ STAC250V2-500E 13.6-MHz RF power transistor delivers high-power density in a miniaturized and thermally efficient package for high-output class-E industrial power supplies. The STAC250V2-500E offers load-mismatch capability of 20:1, the highest in the industry, for enhanced safety up to the maximum power of 600 W, said ST.
The STAC250V2-500E device’s 0.55 x 1.35-inch STAC air-cavity package is more than 50 percent smaller compared with alternative devices in conventional ceramic packages, according to the company. Two STAC250V2-500E transistors used together occupy a similar area to that of a single ceramic transistor, enabling compact power supplies above 1 kW. In addition, the 25 percent lower thermal resistance of the air-cavity package helps boost reliability.
These advantages make the STAC250V2-500E well suited for applications such as induction heaters, plasma-enhanced vapor-deposition systems, and production equipment for solar cells and flat-panel televisions.
The STAC250V2-500E is produced using ST’s latest high-voltage SuperDMOS technology, and provides a maximum operating voltage of 250 V. The breakdown voltage of over 900 V ensures ruggedness in class-E inductive resonant circuits or other applications such as class-D power amplifiers.
Availability: The STAC250V2-500E is in production now in the STAC177 package. Samples are available immediately.
Pricing: Starts from $66.00 for orders of 1,000 units.
Resources: RF DMOS transistors