Malvern, Pa. — Vishay Intertechnology, Inc. announced a new TrenchFET 20 V n-channel MOSFET in the chipscale MICRO FOOT 0.8-mm x 0.8-mm package with an ultra-thin 0.357-mm profile. The Vishay Siliconix Si8824EDB is designed to save space, decrease power consumption, and extend battery usage in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices such as hearing aids.
One of the key features of the Si8824EDB is its low on-resistance. Vishay said the device offers the industry's lowest on-resistance for any 20-V device with a 1-mm square or < 0.7-mm square outline. It provides low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. These ratings are up to 25 percent lower than the closest competing 20-V MOSFET in an identical CSP package, and up to 65 percent lower than the closest competing 20-V device in the DFN 1-mm x 0.6-mm package, said Vishay.
The Si8824EDB offers an extremely low on-resistance times area of 40 mΩ-mm² — 28 percent lower than the closest competing 20-V MOSFET in the DFN 1 mm square package — to save space and reduce battery power consumption in mobile applications. “The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat,” said Vishay.
Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the MOSFET's 2000-V integrated ESD protection, ratings down to 1.2 V, and low on-resistance provide a combination of safety margin, gate drive design flexibility, and high performance for lithium-ion battery-powered applications.
Availability: Samples and production quantities of the Si8824EDB are available now, with lead times of 14 to 16 weeks for larger orders.
Pricing: Starts at $0.16 per piece in quantities of 10,000 for U.S. delivery.