Tokyo, Japan - Toshiba Corporation claims the development of the industry’s first 16-die (max.) stacked NAND flash memory using Through Silicon Via (TSV) technology. The prototype uses TSV technology that uses the vertical electrodes and vias to pass through the silicon dies for the connection. “This enables high speed data input and output, and reduces power consumption,” said Toshiba.
Toshiba’s TSV technology achieves an I/O data rate of more than 1 Gbps, which is claimed to be higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50 percent power reduction (compared to Toshiba’s previous products) of write operations, read operations, and I/O data transfers.
Target applications include low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.
A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).
|The General Specification of Prototype|
|Package Type||NAND Dual x8 BGA-152|
|Storage Capacity (GB)||128||256|
|Number of Stacks||8||16|