Ottawa, Ontario – GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, has appointed Peter Di Maso as Director, Product Line Management. The newly-created position is part of the company’s strategic growth and headcount increase at all levels as the company ramps up production of its market-leading Island Technology® gallium nitride devices to supply global demand from design engineers.
Di Maso will be responsible for creating and executing a sustainable product and market strategy to achieve GaN Systems’ business growth objectives. Working closely with customers, sales teams and development teams, Di Maso will lead and execute the development of new product ideas, continuously exploring boundaries to provide innovation and customer value.
“Peter joins us with more than twenty years’ experience in the power electronics industry and we are delighted to welcome him to the company.” comments Girvan Patterson, President GaN Systems. “Peter’s background includes strategic product marketing at Texas Instruments, expertise in automotive ICs gained at Allegro Microsystems and an early career as a power supply design engineer at Bell-Northern Research. This is an extremely relevant portfolio of experience and skills, and places him in a perfect position to lead teams dovetailing our innovative GaN technology with creative customer solutions.”
Di Maso holds a Bachelor of Engineering degree (Electrical) from Concordia University in Montreal and is currently completing an MBA at Southern New Hampshire University in Manchester. He has lived and worked in the USA and Canada and enjoys participating in local community projects and spending time with his family. He will be based in GaN Systems’ Headquarters in Ottawa.
GaN Systems is the first company to have developed and productised a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems’ Island Technology® die design, combined with the extremely low inductance and thermal efficiency of GaNPX™ packaging and Drive Assist™ technology, provides their GaN E-HEMTs with 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.
About GaN Systems
GaN Systems is a fabless semiconductor company that is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for a wide variety of markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in devices that are smaller and more efficient than other GaN design approaches. The company is headquartered in Ottawa, Canada. For more information, please visit: www.gansystems.com