Toshiba Offers Serial Interface NAND Flash for Embedded

Irvine, Calif. -- Toshiba America Electronic Components, Inc. (TAEC) launched a new family of NAND flash memory products for embedded applications. The new devices are compatible with the widely used serial peripheral interface (SPI). The serial interface NAND flash memory devices can be used in a wide range of consumer and industrial applications, including flat screen TVs, printers, wearable devices, and robots.

The serial interface NAND family consists of 12 products. They include three densities (1 gigabit (Gb), 2 Gb and 4 Gb), two packages (WSON – very thin small outline no lead package - and SOP – small outline package), and two power supply voltages. The WSON package measures 6.0 mm × 8.0 mm and the SOP package size is 10.3 mm × 7.5mm. Products in the ball grid array (BGA) package are under development, with sample shipments scheduled for the first quarter of 2016. The packages and the pin assignments are compatible with common serial flash memories, said Toshiba.

Due to its compatibility with the SPI, Toshiba's new product family can be controlled with six pins, and can be used as an SLC NAND flash memory with a low-pin-count, small package and large capacity.

“NOR flash memory is typically used in embedded applications for consumer and industrial devices,” said Toshiba. “However, in order to support the new, enhanced features found in embedded devices, larger memory densities are needed in order to save software (including boot up programs, firmware and embedded OS) and data (including log data).”

As a result, demand is increasing for SLC NAND flash memory due to its high density, high reliability and low bit cost when compared to NOR flash memory, Toshiba added.

Availability: Samples are available. Mass production is scheduled to begin with the 1-Gb products in December 2015 followed by the remaining devices.

Pricing: N/A/

Serial Interface NAND Product Lineup

Part Number	Density	I/O	Voltage	Package	Mass Production
TC58CVG0S3HRAIF	1 Gb	x1, x2, x4	3.3V	WSON	Dec. 2015
TC58CVG0S3HQAIE			3.3V	SOP	Dec. 2015
TC58CYG0S3HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG0S3HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016
TC58CVG1S3HRAIF	2 Gb		3.3V	WSON	1Q(Jan.-Mar.) 2016
TC58CVG1S3HQAIE			3.3V	SOP	1Q(Jan.-Mar.) 2016
TC58CYG1S3HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG1S3HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016
TC58CVG2S0HRAIF	4 Gb		3.3V	WSON	Dec. 2015
TC58CVG2S0HQAIE			3.3V	SOP	Dec. 2015
TC58CYG2S0HRAIF			1.8V	WSON	1Q(Jan.-Mar.) 2016
TC58CYG2S0HQAIE			1.8V	SOP	1Q(Jan.-Mar.) 2016

Key Specifications

Density	1 Gb / 2 Gb / 4 Gb
Page Size	2KByte (1 Gb, 2 Gb), 4KByte (4 Gb)
Interface	Serial Peripheral Interface Mode 0, Mode 3
I/O	x1, x2, x4
Voltage	2.7～3.6V、1.7～1.95V
Operation Temperature Range	-40 degrees C～85 degrees C
Package	・8pin WSON (6mm × 8mm) ・16pin SOP (10.3mm × 7.5mm)
Others	・High speed sequential read function ・ECC function (ON/OFF, bit flip count report) ・Data protection function (Able to protect specific blocks) ・Parameter page function (Able to output detailed information of the device)