Mouser Electronics, Inc. is now stocking Qorvo’s TGA2976-SM gallium nitride (GaN) power amplifier. Developed using Qorvo’s production 0.25µm GaN on silicon carbide (SiC) process, the TGA2976-SM provides exceptional wideband performance, power, power added efficiency (PAE), and gain.
GaN technology supports radio frequency (RF) power densities between five and six times higher than gallium arsenide-based RF amplifiers. GaN technology’s proven performance and reliability makes it an ideal choice for infrastructure, defense and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance.
The Qorvo TGA2976-SM wideband amplifier, available from Mouser Electronics, is lead-free and RoHS compliant, offers exceptional wideband performance, and supports 40V operation. The TGA2976-SM operates from 0.1 to 3.0 GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 38 percent PAE. The TGA2976-SM is fully matched to 50 ohms at both RF ports, allowing for simple system integration.
To learn more, visit http://www.mouser.com/new/qorvo/qorvo-tga2976-sm-amplifier/.