by 
Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new GaN power amplifier from Analog Devices, Inc.
The HMC8205BF10 delivers +45.5 dBm (35 W) with 35% PAE across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation, and no external inductor is required to bias the amplifier. Integrated DC blocking capacitors for the RFIN and RFOUT pins are included.
The new GaN PA is suitable for pulsed or continuous wave applications, including military jammers, wireless infrastructure and radar, as well as general-purpose amplification.
Additional key features of the HMC8205BF10 include:
- Power gain for PSAT: 20 dB
- Small signal gain: 28 dB
- Gain flatness: +/- 2 dB
- Supply voltage: VDD = 50 V @ 1300 mA
- Package: 10-lead LDCC
An evaluation board for the new device is also available.
To find more information, or to purchase this product today online, please visit the HMC8205BF10 webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from ADI, please visit the ADI storefront webpage.
