Transphorm, Fujitsu Start GaN Power Device Production

Goleta, Calif.– Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm, will allow dramatic expansion of Transphorm’s…