Microsemi OTN Processor in Mass Production

Aliso Viejo, Calif. — Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its DIGI-G4, the company’s latest DIGI Optical Transport Network (OTN) processor enabling the transition to 400G OTN switching solutions is available in mass production. With multiple carriers’ trials underway, Microsemi is enabling the industry to…

Samsung Begins Mass Production of Fastest DRAM

Seoul, Korea – Samsung Electronics Co., Ltd., announced today that it has begun mass producing the industry’s first 4-gigabyte (GB) DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface, for use in high performance computing (HPC), advanced graphics and network systems, as well as enterprise servers. Samsung’s new HBM solution will offer unprecedented…

Samsung 128GB DDR4 Modules Available in Volume

Seoul, Korea – Samsung Electronics Co., Ltd., announced today that it is mass producing the industry’s first “through silicon via” (TSV) double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules, for enterprise servers and data centers. Following Samsung’s introduction of the world-first 3D TSV DDR4 DRAM (64GB) in 2014, the company’s new TSV registered dual inline…

Transphorm, Fujitsu Start GaN Power Device Production

Goleta, Calif.– Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm, will allow dramatic expansion of Transphorm’s…

Samsung Starts Production of 8-Gb LPDDR4 Mobile DRAM

Seoul, Korea – Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has started mass producing the industry’s first 8 gigabit (Gb), low power double data rate 4 (LPDDR4) mobile DRAM based on the company’s leading-edge 20-nanometer (nm) process technology. LPDDR memories are the most widely used “working memory” for mobile devices worldwide. “By initiating production…

Samsung to Mass Produce First 8-Gb DDR4 on 20-NM

Seoul, Korea – Samsung Electronics Co., Ltd., the world leader in memory technology, today announced that it is mass producing the industry’s most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module, both of which will be manufactured based on a new 20-nanometer (nm) process technology, for use in enterprise servers. “Our new 20nm 8Gb DDR4 DRAM more than meets the high performance, high density and energy…