Mouser and Transphorm Announce Global Agreement

Mouser Electronics, Inc., the authorized global distributor with the newest semiconductors and electronic components, has signed a global distribution agreement with Transphorm, manufacturers of high-quality, high-reliability gallium nitride (GaN) transistors for high-voltage power conversion applications. According to the agreement, Mouser will distribute Transphorm’s lines of JEDEC- and AEC-Q101-qualified GaN FETs and evaluation tools. “We are…

Transphorm Expands Sales Channel

Goleta, Calif. –Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to support growing design activity for its GaN power transistors and modules. “The power electronics industry is waking up to the realization that Transphorm…

Transphorm, Fujitsu Start GaN Power Device Production

Goleta, Calif.– Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm, will allow dramatic expansion of Transphorm’s…

Transphorm Awarded Patents for GaN Power Conversion

Goleta, Calif.– Transphorm Inc. today announced that it has secured fundamental patents in the area of Gallium Nitride (GaN) power conversion. The United States Patent and Trademark Office (USPTO) patent number 8,816,751 titled “Inductive Load Power Switching Circuits” was granted August 26, 2014 and the patent application number 13/887,204 titled “Bridge Circuits and Their Components” was allowed…